Abstract
The performance of In 0.48Ga 0.52P/In 0.2Ga 0.8As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) was simulated using a two-dimensional device simulator, MEDICI [(Two-Dimensional device Simulation Program, Technology Modeling Associates Inc., Sunnyvale, CA, 1997)1]. Physical models used in the simulation include Shockley–Read Hall recombination, Auger recombination, Fermi–Dirac statistics and field-dependent mobility. Key results presented include the transconductance, current gain cut-off frequency and current–voltage ( I– V) characteristics. We compared the simulated performance to two fabricated devices of different gate lengths and obtained a good match between our simulation results and measured data. These results show that the chosen physical models applied by the two-dimensional device simulation program is viable for a fast turn-around study and development of p-HEMT devices prior to fabrication.
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