Abstract
Micro and multi-crystalline silicon thin films have been prepared in the growing rate of more than 10 Å/S by hot wire (HW) CVD. The crystallite size of the films ranges from 0.1 to 1 μm. The effects of processing parameters on the property of the films have been systematically studied. The energy gap ranges from 1.5 to 1.12 eV when substrate temperature changes from 250°C to 450°C. The conductivity of the doped films is as high as 10 (Ω cm) −1. An anomalous behavior of hot palladium wire in an atmosphere of silane at low pressure is reported and preliminarily explained. The reason why tungsten wire is easy to break during silicon thin film deposition by hot wire CVD is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
