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Abstract
The growth of semiconductor films with a diamond-type lattice is simulated by the comparison of the probabilities of isolation, creation, and diffusion movements of base and impurity atoms. The Monte-Carlo method is used to simulate the growth with allowing periodical regional conditions on the boundary of the area. The influence of the supersaturation, deposition temperature on the film growth rate, surface film roughness, critical thickness of continuous films, impurity atom occupation is traced for the silicon film growth. The simulation results are compared with experimental dates on the growth of films and on its doping from vapour phase or molecular beams in vacuum.
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