Abstract
The article is based on an important characterization task to accurately evaluate the properties of the layers, their interfaces with c-Si, and to select the best candidates to integrate them into a c-Si-based solar cell. The work has shown that GaP could be doped with n-type doping, thus providing a selective contact for the electrons, and has a significant valence band offset with c-Si, making it an excellent candidate as a selective contact, without requiring an additional ITO layer.
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