Abstract
For the first time, we report on the superior performance of the dual-drain gallium nitride (GaN) magnetic field-effect transistor (MagFET) at elevated temperatures. The IV characteristics of the devices reported here were collected under dc conditions and tested at elevated temperatures, 300, 323, 373, and 448 K using a custom-made heating stage, with a thermal feedback loop to accurately control the temperature. Light exposure experiments were conducted during raised temperature levels using an LED light source of wavelength 470 nm. The relative sensitivity of the GaN dual-drain MagFET was calculated and demonstrated a degradation from 9.78%T−1 at 300 K to 8.36%T−1 at 323 K, 6.10%T−1 at 373 K, and 3.79%T−1 at 448 K. This is equal to a small sensitivity decrease of 0.04%T−1/K. It is proposed that the observed reduction in sensitivity reported herein is due to increased phonon scattering in the 2-D electron gas channel. Despite this reduced sensitivity at elevated temperatures, the lowest sensitivity measured at 448 K surpasses those reported for silicon competitors.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
