Abstract
We report the damageless surface morphology of gallium nitride (GaN) films during argon and nitrogen plasma etching at elevated temperatures up to 600 °C. For Ar plasma bombardment at high substrate temperatures of around 600 °C, Ar+ ion bombardment dissociates Ga–N bonds by the preferential removal of nitrogen, which promotes roughness of the GaN surface by the aggregation of gallium atoms. For the N2 plasma one, the N/Ga remains stoichiometric with higher values above 0.69, and the surface is not significantly roughened, even at 600 °C. Therefore, the aggregation of metallic Ga induces surface roughening during ion-enhanced etching of GaN at elevated substrate temperatures.
Published Version
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