Abstract
Experiments have been carried out to study the field electron emission characteristics of nitrogen-doped amorphous diamond thin films prepared by magnetic-field filtered carbon ion deposition. A transparent anode imaging technique is used to record the spatial distribution of individual emission sites and the total emission current–voltage characteristics of the films. Also, the optical and electrical properties of the films having different nitrogen-doping levels have been studied. A correlation has been found to exist between the field-emission characteristics and the band gap of the films; i.e., it is found that the films of relatively small optical band gap have low turn-on fields.
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