Abstract
Nitrogen containing nanocrystalline diamond films have beensynthesized by microwave plasma enhanced chemical vapour deposition usingN2/CH4 as the reactant gas. The films prepared under differentN2/CH4 flow ratios were studied by scanning electron microscopy,transmission electron microscopy, x-ray diffraction and secondary ion massspectroscopy. Their field emission characteristics, i.e. both the distributionof the emission sites and current-voltage characteristics, were recorded using atransparent anode technique. It was found that the grain size of films preparedunder different conditions varies and has a relationship with their turn-onfields. A possible explanation is given, which proposes that nanocrystallineboundary induced defect states might affect the field emission characteristics.
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