Abstract
The Ferroelectricity maintained in ultrathin films could suffer from bad polarization retention due to epitaxial stresses and interfacial effects. It makes a great difference to incorporate ultrathin PZT films with a few nanometer-thick Al2O3. The ferroelectric properties, such as fatigue and retention, show obviously changes in our experiment. The ultra thin Al2O3 layer which acts as a tunnel switch in the progress of domain switching affects ferroelectric properties in many ways.
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