Abstract
Abstract In this prelimnary work, the aim was to fabricate a simple tin (II) sulfide (SnS) quantum dot-sensitized solar cell (QDSSC) from aqueous solution. The SnS QDSSCs were characterized by using current-voltage test (I-V test), scanning electron microscopy (SEM), and ultraviolet-visible (UV-Vis) spectroscopy. SEM results showed the presence of TiO2 and SnS elements in the sample, confirming the successful synthesis of SnS quantum dots (QDs). The overall efficiency of QDSSCs increased when concentration of the precursor solutions, which were aqueous sodium sulfide and tin (II) sulfate decreased from 0.5 M to 0.05 M. On the other hand, for a fixed precursor concentration, the efficiency of QDSSC reduced once an optimal cycle of of successive ionic layer adsorption and reaction (SILAR) was achieved. The bandgap energies of QDs obtained by extrapolating the Tauc plot were used to predict the QDs size. In general, the QD size was bigger for samples prepared from precursor concentration of 0.5 M, and with higher number of SILAR cycle used. The best performance was obtained from sample prepared from 0.05 M precursor concentration with 4 SILAR cycles.
Highlights
IntroductionCepaoecapgpoftrieefnenctfroroofheesshncdliSnmssaccceyieIfieiuuttrwLrvueiivosarrhnneAnliaessfltagRc,oosdhm(iQnIyoytrrt.Ihc4hpdnDn)Tcosyeel,tioSSohsfecchfQunTlISQeloeuLepalclCDrDbsfatAeurauiiyaaeSnrssoRctsenepieSnftoezprdircdaCsxeddfalyurga,soee.teScwcaditwdicdlTnoepneaswrhhdnpSoescsfeeeir.rarronbqcoroeepsehfbuiencmaetg0eruiuacsdgwogs.eenrs50enitsfdeeetr.raoMup0rdsoafwenrme5om,otnchroarafoMdfoeqdnso0Qppnnauor.drrtDp5cmmeietecmewsrsadMooeapnc(oiuiancnlctQttpiaLmsLAtblesurhirctcowteeoDaasrte,rceteosaheotntsi0hnyaspAodidriodwin).oceFpntrgdT0.(∗urrAleuwnaaShesQiea5hTplucd,csirdI,etiehDsAeLMdoaomittierAoobhbehArsfnflsnn.pbeoanyi∗elcasRosotaOuedotarnieeueieovafo)nzmtndinttdxfrfelfieerfshrrwffnattirbtt.oiuiitodrrrAaehhcedtdaaoIemaarcufiilndeees∗eirT----laKbra.degegeerIuroancolwStccsbfiijatTscndunnweuhounurnoheeiticauntennbbrhalldlteaohBdlaslfrdccctslliii-nIeenatretesehtesezgtdnfihniadelipolaaoesooemulconeetcnli1lnbsrnnuaciolaoelsL9choplielemat[sktgnl,ce5eam2rbdeoitrelois4idwcoba]ggtdeypucF.nVyoa,soniyestiShugnl-pau-ontahrtbe.libyleeihaldiselycaaaSsr,tnanifnete[hvaherrcouo(elas1enoeiveoaosneer]rftxncoraneaeve.iyinindaohtarldefresnreeehagtsgwtimtsnarsinematbin[eyaooovnaa1tdblpagunfpsiTlahae0ssgryasetiletatepcosue,eoonrothmvtrhiithDrnssfruhfnremecewaoeaoiemorreeeocsicnrlscaicoselofmtontlseeclegltsohxrllsscnuneinnesuiaapiroVeieagand,n-iatssrnbhnltr.lensgu,,rtfileleicwiise-rpSoei.ceissocegdgeataaotadonaameaflu.hnouaplllrcxcunsagdsra6tldvlarefhpsad,ioreoo.iailasaLe1fernr.lbdsaoioeLfur]aenelouudsg)enurnvaferCntos;finausroedbcelowiotekn(caevsierhrmloinwmenqdpfeatgehicsefurliFao.uoyraohli)pytntaesdrcwnboS.erhtawdvwilowthphvllo,HnrpheapieaiepehslhieaciaolaarahtsrudlaolaenaiohwcLaittrsyscnnrnirimddtbehmrnepmhcwse(eutisovaaegpshcelrv.nocifinedlgesoaart-uietFelniirnhncyyeeassflrtta,l.oluerta[erdsh1bndpip3eenpo,itesna(ehDsistignieameretedineadvnoocsn[uebd4mesiaaeot,d(loilsCciiio)ritmiiosnynpatDe nition 1.4]); (via)rethaeimLeeodnfaorrdmpaasisrpcroondsuicsttiionng. oHfoawpevaeirr,odfeoppopsiotisointeogfenerators for t bra, acting on an etvhailnuafitlimonrmeqoudiruelseh(sigehe [t5e,mPpreorpaotusirteioannd9.2h]i)g.hThveaceuxuammple (i) is a spe Abbreviations: chemical bath deposition (CBD) Chemical bath deposition fill factor (FF) Fill factorFTO Fluorine-doped tin oxide I-VCurrent-voltage eBvxayalu[m1Le3eps,tlLoeAefs,mA(Aim.i∗iF)a,do(1eri.vn3)o]cfagfateio≤oenrerarmnndeacidethsrhiLe≤ptaseeeixoteooiipdlcgontanehinerlaraieniwlrertocdsdchnepfvaiclpgcailsessheaceodneislaer[aec3conoorraq]ffao.unuctA(tsieeivVToer,l)ehnla..AsdehW∗θsihgoeficharh-oloecaasmimarspgbnbrdeceointidencdmhlvoealueesmtteciecnoterfttinisomooritrsnohitaonfnecfoceahorofnkwisnoeAdntuvhe.oen.eoswTLdtfelhhleacoeteettowdhirn{ogoieAθnnderrid,}eAdi=r∗inidsges{neθolfit-}eddi=aunaquantum dots (QDs) Quantum dots whenever A∗ acts opnrotdhuecbtiaosnisc{ovsti}adi=ndinhiagnh irerneedrugyciebflfeictireindciaygwonhaiclhfacsahnion
Anode electrodes were prepared by deposition of SnS quantum dots (QDs) which were fabricated via successive ionic layer adsorption and reaction (SILAR) technique
Three sets of QDSSC devices were fabricated from three different precursor concentrations (i.e. 0.05 M, 0.1 M and 0.5 M)
Summary
CepaoecapgpoftrieefnenctfroroofheesshncdliSnmssaccceyieIfieiuuttrwLrvueiivosarrhnneAnliaessfltagRc,oosdhm(iQnIyoytrrt.Ihc4hpdnDn)Tcosyeel,tioSSohsfecchfQunTlISQeloeuLepalclCDrDbsfatAeurauiiyaaeSnrssoRctsenepieSnftoezprdircdaCsxeddfalyurga,soee.teScwcaditwdicdlTnoepneaswrhhdnpSoescsfeeeir.rarronbqcoroeepsehfbuiencmaetg0eruiuacsdgwogs.eenrs50enitsfdeeetr.raoMup0rdsoafwenrme5om,otnchroarafoMdfoeqdnso0Qppnnauor.drrtDp5cmmeietecmewsrsadMooeapnc(oiuiancnlctQttpiaLmsLAtblesurhirctcowteeoDaasrte,rceteosaheotntsi0hnyaspAodidriodwin).oceFpntrgdT0.(∗urrAleuwnaaShesQiea5hTplucd,csirdI,etiehDsAeLMdoaomittierAoobhbehArsfnflsnn.pbeoanyi∗elcasRosotaOuedotarnieeueieovafo)nzmtndinttdxfrfelfieerfshrrwffnattirbtt.oiuiitodrrrAaehhcedtdaaoIemaarcufiilndeees∗eirT----laKbra.degegeerIuroancolwStccsbfiijatTscndunnweuhounurnoheeiticauntennbbrhalldlteaohBdlaslfrdccctslliii-nIeenatretesehtesezgtdnfihniadelipolaaoesooemulconeetcnli1lnbsrnnuaciolaoelsL9choplielemat[sktgnl,ce5eam2rbdeoitrelois4idwcoba]ggtdeypucF.nVyoa,soniyestiShugnl-pau-ontahrtbe.libyleeihaldiselycaaaSsr,tnanifnete[hvaherrcouo(elas1enoeiveoaosneer]rftxncoraneaeve.iyinindaohtarldefresnreeehagtsgwtimtsnarsinematbin[eyaooovnaa1tdblpagunfpsiTlahae0ssgryasetiletatepcosue,eoonrothmvtrhiithDrnssfruhfnremecewaoeaoiemorreeeocsicnrlscaicoselofmtontlseeclegltsohxrllsscnuneinnesuiaapiroVeieagand,n-iatssrnbhnltr.lensgu,,rtfileleicwiise-rpSoei.ceissocegdgeataaotadonaameaflu.hnouaplllrcxcunsagdsra6tldvlarefhpsad,ioreoo.iailasaLe1fernr.lbdsaoioeLfur]aenelouudsg)enurnvaferCntos;finausroedbcelowiotekn(caevsierhrmloinwmenqdpfeatgehicsefurliFao.uoyraohli)pytntaesdrcwnboS.erhtawdvwilowthphvllo,HnrpheapieaiepehslhieaciaolaarahtsrudlaolaenaiohwcLaittrsyscnnrnirimddtbehmrnepmhcwse(eutisovaaegpshcelrv.nocifinedlgesoaart-uietFelniirnhncyyeeassflrtta,l.oluerta[erdsh1bndpip3eenpo,itesna(ehDsistignieameretedineadvnoocsn[uebd4mesiaaeot,d(loilsCciiio)ritmiiosnynpatDe nition 1.4]); (via)rethaeimLeeodnfaorrdmpaasisrpcroondsuicsttiionng. oHfoawpevaeirr,odfeoppopsiotisointeogfenerators for t bra, acting on an etvhailnuafitlimonrmeqoudiruelseh(sigehe [t5e,mPpreorpaotusirteioannd9.2h]i)g.hThveaceuxuammple (i) is a spe Abbreviations: CBD Chemical bath deposition FF Fill factorFTO Fluorine-doped tin oxide I-VCurrent-voltage eBvxayalu[m1Le3eps,tlLoeAefs,mA(Aim.i∗iF)a,do(1eri.vn3)o]cfagfateio≤oenrerarmnndeacidethsrhiLe≤ptaseeeixoteooiipdlcgontanehinerlaraieniwlrertocdsdchnepfvaiclpgcailsessheaceodneislaer[aec3conoorraq]ffao.unuctA(tsieeivVToer,l)ehnla..AsdehW∗θsihgoeficharh-oloecaasmimarspgbnbrdeceointidencdmhlvoealueesmtteciecnoterfttinisomooritrsnohitaonfnecfoceahorofnkwisnoeAdntuvhe.oen.eoswTLdtfelhhleacoeteettowdhirn{ogoieAθnnderrid,}eAdi=r∗inidsges{neθolfit-}eddi=aunaQDs Quantum dots whenever A∗ acts opnrotdhuecbtiaosnisc{ovsti}adi=ndinhiagnh irerneedrugyciebflfeictireindciaygwonhaiclhfacsahnion. OHfoawpevaeirr,odfeoppopsiotisointeogfenerators for t bra, acting on an etvhailnuafitlimonrmeqoudiruelseh(sigehe [t5e,mPpreorpaotusirteioannd9.2h]i)g.hThveaceuxuammple (i) is a spe Abbreviations: CBD Chemical bath deposition FF Fill factor. QDs Quantum dots whenever A∗ acts opnrotdhuecbtiaosnisc{ovsti}adi=ndinhiagnh irerneedrugyciebflfeictireindciaygwonhaiclhfacsahnion. QDSSC Quantum dot-sensitized solar cetlhlen the ordering {eθxcde−ei}ddi=thies athlseorsettaicnadl aSrhdo, caknledyn-Qoufeuirstshererliomrditeroifn3g3i%s standard. Sstoaluntdioanrd-porordcesrsinedg osefmthiceoenigdeunctvoarlusoelsarofceAll.sTshuecnhA, A∗ is self-du is a standard orderaisngdyoef-stheneseitiigzeendvsaolluaer sceolflsAa∗n(dseqeua[7n,tuPmrodpoots-siteinosnit8iz.7e]d)
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