Abstract
Er-doped SiO2 and Er-doped Si-NCs embedded in a SiO2 matrix were produced by Er and/or Si ion beam implantation of a Si (100) substrate. The composition and distribution of implanted Er varies in samples either with or without Si implants. HAADF and EELS detail in samples with Si implants, the Si and Er distribution is identical, and within a band of ~110 nm width at ~75 nm below the SiO2 surface. Intense PL emission at 1.54 μm confirms formation of ErSi2, for the majority of aggregates, is unlikely. The present investigation details most Si-NCs are surrounded by Er2O3, or possess this phase within.
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