Abstract
Er-doped SiO2 and Si nano-crystals (NCs) embedded in a SiO2 matrix were produced by ion beam implantation of Si (100) substrates. After annealing Er ions agglomerate in different positions with different compositional properties in samples with and without Si implants. HAADF and EELS show that in the sample with Si implants the Si and Er distribution is identical and within a band of ~110nm width ~75nm below theSiO2 surface whereas in the sample with no excess Si, Er forms on average much larger, amorphous aggregates, presumably an Er-oxide, in the SiO2 matrix with tendency to move towards the surface of the SiO2 layer.
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