Abstract
The electrothermal characteristics of solid-state incandescent light emitting devices (SSI-LED) made from MOS capacitors with a high-k gate dielectric deposited on the p-type Si substrate is studied using finite element modeling in the COMSOL Multiphysics program. The results obtained are discussed in correlation with experimental observations reported on the device. Temperature variation within and around individual conductive paths (or, nano-resistors) distributed randomly in the gate dielectric is discussed along with their size effects. Additionally, light intensity distribution over SSI-LED is modelled analytically incorporating effects of size-based number distribution and ITO thin film filter. The SSI-LED at lower magnifications is demonstrated to behave as a single light emitting source.
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