Abstract
The temperature distribution in nano-resistors based solid-state incandescent light emitting devices made from MOS capacitors with a high-k gate dielectric deposited on the p-type Si substrate is studied using finite element modeling. The results obtained are correlated with experimental data previously reported on the device. The physics-based mathematical formulation with governing equations was simulated using the COMSOL Multiphysics program. Temperatures within and around individual nano-resistors in different geometrical arrangements, distributions and sizes were calculated. The temperature distribution across the complete device under various boundary conditions was simulated and optimized based on the optical emission spectrum of the device.
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