Study of Electromigration-Induced Void Nucleation Problem Dominated by Bulk, Grain Boundary, and Interfacial Diffusion Based on an Improved Energy Approach

Abstract

Listen

Translate article

In this present article, an improved electromigration-induced void nucleation model is developed based on our previous work. The Gibbs free energy function of the electromigration-induced void nucleation process is reconstructed to well describe the electromigration-induced void nucleation process. The mass diffusion energy term in the Gibbs free energy function is obtained by the electromigration damage entropy model framework proposed by Basaran et al. The bulk diffusion, grain boundary diffusion, and interface diffusion effect during electromigration can be all considered. Thus, the applicability of the newly developed model is expanded and can be widely used not matter in the thin-film interconnects but also in the RDL and TSV interconnect structures in advanced electronic packaging. The electromigration-induced void initiation time and the critical void nucleation radius can be obtained analytically based on the present model. Several experiments conducted on these new structures are illustrated. It is shown that the theoretical results of the electromigration-induced void nucleation time can well match the experiments.