Abstract
Electroluminescence of InAs(Sb,P) heterostructures grown on InAs substrates was studied in the temperature range T = 4.2−300 K. At low temperatures (T = 4.2−50 K), stimulated emission was observed. This effect was due to optical resonator, which was formed between the lower face of the LED chip with the solid metal contact and the upper face with semiconductor/air interface. The emission became spontaneous at higher temperatures due to the effect of CHHS Auger recombination process, when the energy of a recombining electron-hole pair was transferred to another hole with the latter transitioning to the spin-orbit-splitted band. The results obtained show that structures based on InAs(Sb,P) are a promising material for fabrication of vertical-emitting mid-infrared lasers.
Published Version
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