Abstract
Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective capacitance by using different oxide materials on source and drain sides, and determination of optimum length of oxides for the superior device performance has been presented in this work. This paper shows a detailed performance analysis of the Analog Figure of Merits (FoMs) like variation of Drain Current (IDS), Transconductance (gm), Output Resistance (R0), Intrinsic Gain (gmR0), RF FoMs like cut-off frequency (fT), maximum frequency of oscillation (fMAX), gate to source resistance (RGS), gate to drain resistance (RGD), gate to drain capacitance(CGD), gate to source capacitance (CGS) and total gate capacitance (CGG) using Non-Quasi-Static (NQS) approach. Power analysis includes Output power (Pout), Gain in dBm and power output efficiency (POE) have been studied. Studies reveal that the device with higher dielectric material towards source side shows superior performance. On subsequently changing the proportion of two oxides in a layer by varying length, it is observed that as the proportion of oxide increases the device demonstrates more desirable Analog and RF characteristics while best power performance is obtained from device with equal lengths of HfO2 and SiO2.
Highlights
The advancements in technological spheres have given rise to an ever-increasing demand for devices delivering faster performances
High power and high frequency operation require material with large breakdown voltage and high electron velocity, like GaN [3], which has a higher Johnson’s figure of merit (JM) determining power frequency limit exclusively based on material properties [4]
The heterojunction at AlGaN-GaN interface results in formation of high bandgap material system and subsequently leads to origination of two-dimensional electron gas (2DEG) of a density with order of 1013 cm− 2 facilitating high speed movement of charge carriers along the quantum well, resulting in AlGaNGaN HEMT to be a superior device as compared to conventional MOSFETs [6][7][8]
Summary
The advancements in technological spheres have given rise to an ever-increasing demand for devices delivering faster performances. III-V HEMT devices like AlGaN/GaN HEMTs has shown huge potential in the domain of RF applications [1] and considerably higher low noise performance owing to the explicit and desirable properties of the GaN material, for instance, large bandgap (~ 3.4eV), large critical electric field (~ 2MV/cm), high electron drift velocity (2.1–2.3 ×1010 cm/s), good thermal conductivity and stability [2] makes it a more suitable material for fabrication of devices. In HEMT device operation, regardless of its property of having higher operating voltage, there arises a significantly high gate leakage current, making it unsuitable for low noise and power applications. The high-performance GaN-based devices are suitable for RF through mm-wave applications, as well as for power conversion and control and cryogenic low-noise systems. The device, from the second pair, which shows more desirable characteristics is optimized by subsequently changing the proportion of the two dielectrics used, changing the effective capacitance
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