Abstract
In this work, Double delta doped with double gate (DG) Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) is distinguished by the novel design features such as a multicap layer, thin InAlAs barrier, composite channel and recessed gate with HfO 2 as a gate dielectric material, which are applicable for high-frequency applications. The performance of DG MOSHEMT is characterized by TCAD Sentarus simulations, where the results are obtained in terms of high drain current, high transconductance, high cutoff frequency and Maximum frequency of oscillation while compared with single gate HEMT structure.
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