Study of effect of hydrostatic pressure on structural, electronic and magnetic properties of In0.75Mn0.25P using density functional theory

Abstract

In this paper, the investigation of effect of hydrostatic pressure on the structural, electronic and magnetic properties of In0.75Mn0.25P Diluted Magnetic Semiconductor in Zinc Blende (B3) phase at 0 GPa–26 GPa pressure range is done using first principal calculations as implemented in Spanish Initiative for Electronic Simulations with Thousands of Atoms (SIESTA) code.The theoretical investigation of electronic and magnetic properties of this compound represents that the compound is half-metallic ferromagnet and show 100% spin polarization at different values of pressure. It is found that forbidden energy band gap increases with increase in pressure as spin polarized band structures experience changes with applied pressure. The calculated results show that lattice constant and volume of compound decreases along-with increase in induced local magnetic moments values of non-magnetic indium and phosphorus atoms with applied pressure.