Abstract
A Schottky barrier GNRFET with asymmetric and symmetric dielectric layer with high-k oxides is presented. The device considered is a double-gate MOSFET structure. We have studied the effect of various high-k gate dielectrics on the performance of graphene nanoribbon FETs (GNRFET). In addition to that, we have studied the effect of using two different dielectrics on top and bottom gate oxide. The study is carried out within the non-equilibrium Greens function formalism (NEGF). Results show that the use of high-k gate dielectric improves GNRFET characteristics like on-current, on-to-off current ratio. We obtained the value of 2.2 μA and 22 for drain current and on-to-off current ratio, respectively, for SiO2, whereas for La2O3 we obtained the value of 6.33 μA and 63.3, respectively for the same.
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