Study of doping two tin atoms per unit cell of silicene nanoribbons in the presence of an external electric field

Abstract

Silicene is a low-dimensional material of interest to many scientists because of its structural properties that are compatible with silicon devices and opens up many new applications for technology. Silicene nanoribbons are one-dimensional structures, the silicene nanoribbons studied here have 12 silicon atoms inside, and the edges are edited by 4 hydrogen atoms per unit cell. There are two doped Sn atoms per unit cell of silicene nanoribbons, the three configurations studied here are ortho, meta, and para configurations. The system is placed in an external electric field of 0.4 V/Angstrom. Use density function theory (DFT) to calculate the formation energy, energy band structure, and state density of the system. The doped systems are stable after optimization. The presence of the external electric field and the doping element Sn is responsible for the changes in the structural properties of the system.