Abstract
In this paper, we focus on studying the low-temperature activated bulk TiZrV getter materials instead of thin film materials to meet the high reliability requirements of vacuum devices. The research was carried out by introduce Cu element to improve the activated characteristic and gettering performance. The XRD and in-situ XPS results showed the addition of Cu could effectively reduce the diffusion temperature and increase the diffusion rate of O atoms by modifying the phase structure of TiZrV getter. An appropriate amount of Cu was beneficial for stabilizing high-temperature β-Zr phase at room temperature, which had a larger interstitial void compared to that of the low-temperature α-Zr phase. The TiZrVCu getter with high proportion of β-Zr phase displayed 55.0% higher gettering performance than that of TiZrV with activated at 350 °C for 10 min. The proposed strategy of improving the low-temperature activated gettering performance offers promising opportunities for exploiting potential new low-temperature activated bulk getter materials.
Published Version
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