Abstract
Abstract D implantation into Be-containing mixed material layers: Be, Be–W (W: ∼6 at.%) and Be–C (C: ∼50 at.%), was performed at elevated temperatures. The temperature dependence of D retention varied depending on the admixed element. D retention in Be and Be–W layers decreases with increasing implantation temperature, while the Be–C layers maintained rather high D retention in the present investigated temperature range (up to 623 K). D desorption behaviour from Be–C suggests the contribution of C–D bonds to D retention. W admixture into Be can significantly suppress D retention in Be. Long-term isothermal annealing at 513 and 623 K for D removal was also performed to simulate the ITER-wall-baking scenario. Even extended annealing at temperatures comparable to or lower than the implantation temperature does not lead to a significant release of retained D.
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