Abstract
Abstract This paper emphasizes on III-V material based inverted metamorphic triple junction (3J IMM) solar cell as an alter-native to 3J lattice-matched InGaP/GaAs/Ge design (3J LM). 1-sun AM0 efficiency is obtained to be 7% higher for the proposed 3J IMM InGaP/GaAs/In0.30Ga0.70As design compared to the experimental 3J LM solar cell. The mi- nority carrier lifetime as a function of threading dislocation density (TDD) is presented for p-In0.30Ga0.70As material. The influence of TDD in the buffer and the bottom In0.30Ga0.70As subcell on the device characteristics is presented and analyzed. In addition to TDD, the degradation of solar cell output parameters is plotted as a function of trap concentration by considering irradiation-induced deep level traps. We compared the degradation tendencies of short circuit current density Jsc, open circuit voltage Voc, and efficiency of 3J IMM and 3J LM solar cells with respect to trap concentration. This analysis became possible by defining trap related parameters and the corresponding carrier lifetime changes using the crosslight APSYS tool. In addition to superior radiation resistance, the proposed device has shown 4% higher efficiency compared to 3J LM device even with the inclusion of non-idealities such as surface recombination velocity, TDD, and trap concentration.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call