Abstract
Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.
Highlights
We present results on the study of the stability of the energy-peak position for a CdZnTeSe planar detector over an operating voltage range of −20 to −200 V
We report on peak position changes based on the amplifier shaping time
The high crystal uniformity of CZTS and near absence of Te inclusions and grain boundary networks have given it great advantage in reducing the cost of semiconductor nuclear detection devices that can operate at room temperature without cryogenic cooling
Summary
This advantage comes from the high crystal uniformity of CZTS compared to CdTe and CZT [2] [3]. CZTS has the potential of reducing the cost of fabricating devices that could be used in these applications
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