Abstract
Recent advances towards Electro-optic (EO) modulators make use of the Pockel’s effect in non-centrosymmetric crystals which allows the efficient modulation of light beam. The large value of electro-optic (EO) coefficient of Strontium barium niobate has gained advances in field of electro optic devices. In the present work, field-induced birefringence was measured in the transverse geometry for 800 nm thin SBN film deposited using Pulsed Laser Deposition (PLD) technique on the fused silica substrate. A small birefringence was induced in the as-deposited film by the alignment of the incident laser along c-axis in the film plane and applying dc electric field perpendicular to it. The value of induced birefringence was found to vary with applied electric field in a non-linear manner indicating the presence of EO Pockel’s and a weak Kerr effect.
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