Abstract
By using a sequential evaporation method, Cu(In,Ga)Se2 (CIGS) thin films with a high Ga/(Ga+In) mole ratio were fabricated on Mo/soda-lime glass substrates. The bandgap energy (Eg) estimated by the photoreflectance (PR) and piezoelectric photothermal (PPT) methods shifted to the higher photon energy side with increasing Ga/(Ga+In) mole ratio. Although PR signals could not be observed, the PPT method could determine Eg even for high Ga/(Ga+In) mole ratio samples. A broad photoluminescence peak originating from band-to-band or impurity level was also observed for all samples. The present experimental results imply that the Ga/(Ga+In) mole ratio of CIGS thin films can easily be controlled by a sequential evaporation method, and that the PPT method is a powerful method for determining the Eg of low crystallinity samples.
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