Abstract
Cu(InGa)Se2 (CIGS) thin films were grown by three-stage growth process using a molecular beam deposition system on a Mo/soda lime glass (SLG) substrate. The raman scattering spectroscopy of as-grown samples with a high Ga composition showed the presence of Cu2-xSe compounds, which are thought to be responsible for the degradation of the open circuit voltage of solar cells. Rapid thermal annealing (RTA) using an infrared lamp in forming gas (N2 95% + H2 5%) ambient under atmospheric pressure was examined in order to remove the Cu2-xSe compounds, and it was found that hydrogen is necessary to remove the Cu2-xSe compounds. The influence of RTA conditions on device performance was investigated. A Cu(In0.4Ga0.6)Se2 (energy band gap: Eg=1.37 eV) solar cell with an efficiency of 11.7%, particularly open circuit voltage (Voc) increased from 640 to 750 mV, was obtained by RTA at 400°C.
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