Abstract
ABSTRACTThis work investigates the quality of back-channel passivation applied to sputter-deposited IGZO bottom-gate TFTs. Passivation materials investigated were alumina, silicon dioxide, and B-staged bisbenzocyclobutene-based (BCB) resins. Sputtered quartz and PECVD (TEOS) SiO2rendered the IGZO material highly conductive (ρ< 0.01 Ω·cm), with subsequent annealing in oxidizing ambient unable to restore a high-resistivity state. Appropriate channel resistivity was restored on devices passivated with electron-beam evaporated alumina and spin-coated BCB when followed by annealing in air. Alumina passivated devices demonstrated improved stability; however slight distortions in measured I-V and C-V characteristics were observed. TCAD simulation was used to develop an IGZO material/device model, with results indicating the significant presence of oxygen-vacancy (OV) interface traps and negative fixed charge remaining at the back-channel.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
