Abstract
ZnO thin films were grown using the atomic layer deposition (ALD) technique with diethyl zinc (DEZ) and deionized water as precursors. A viscous-flow atomic layer deposition reactor has been designed and constructed for the ZnO growth. An in-situ quartz crystal microbalance (QCM) has been interfaced with the reactor to monitor the ALD film growth. Using this ALD reactor we have grown ZnO films on oxidized Si(001) and on MgO(111) polar oxide substrates. QCM was used to monitor the film growth rate as function of precursor pulse time and temperature. In the ALD temperature window (130 to 170oC), the growth rate was found to be about 2.3 Aå/cycle. Ex-situ atomic force microscope (AFM) studies on ZnO thin films reveal surface roughness increases with number of ALD cycles.
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