Study of asymmetrical effects of silicon submicron transistors

Abstract

We studied the asymmetrical effect of submicron channel length NMOS silicon transistors. The threshold voltage of transistor was determined by transconductance ( g m) extraction method and constant-current (CC) method. The effective channel length ( L eff) was determined by ‘shift and ratio’ methods. The short channel and reverse short channel effect were observed from the threshold voltage ( V to) versus channel width ( W) curve. The I– V curves were not shown significant asymmetry of drain and source. The results showed that the asymmetry of drain and source increased with reducing the channel length. The standard deviation of threshold voltage and effective channel length were increased with decreasing channel length.