Abstract
A new semiconductor laser diode amplifier structure which consists of a semiexponential-linear tapered waveguide active layer has been proposed to improve the saturation output power. Various characteristic performances of this device have been analysed based on the step-transition approach taking into account the effects of the spatial distributions of the carrier density and the optical field. The effects of various tapered structures on the gain saturation, intensity distribution and amplified spontaneous emission noise have also been investigated.
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