Abstract
We propose two new MOS-power device structures, which realize lower on-state voltage than previously proposed injection-enhanced gate transistors (IEGTs). One is an improved IEGT (or IEGN), and the other is a MOS-controlled diode (or IEGD). Using 2-D numerical simulations, it has been confirmed that the IEGN and the IEGD realize a lower on-state voltage drop than the conventional IEGT, retaining MOS gate drivability. This means that the injection-enhanced gate structure improves the effective electron injection efficiency not only for transistor structures, but also for devices with a low-injection efficiency emitter. It has also been confirmed that the 4.5 kV IEGN and IEGD can operate under the same circuit conditions as a 4.5 kV GTO-thyristor.
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