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Abstract
AbstractCSiC films were prepared with an ion‐mixing technology and then introduced with hydrogen by using hydrogen ion irradiation or high‐pressure permeation. It is found that the surfaces of the CSiC films are always covered by contamination oxygen. XPS was used to analyze the behavior of the contamination oxygen on the surfaces of the CSiC films before and after hydrogen introduction. The results show that apart from the adsorbed top layer‐containing contaminations like oxygen, carbon, and oxyhydrogen species, the oxygen can react with elements of films and hydrogen. Different carbon–oxygen–hydrogen configurations and CSiO or CSiOH on the subsurfaces can be formed with different hydrogen introduction methods. Also, the thicknesses of these species‐related oxygen on the subsurface of CSiC films are estimated in this article. Copyright © 2009 John Wiley & Sons, Ltd.
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