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Abstract
SiC films on stainless steel prepared by ion beam mixing were irradiated by hydrogen ion beam with an energy of 5 keV and a dose of 1 × 10 22 ions/m 2. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films before and after hydrogen ion irradiation in order to study the effect of hydrogen ion irradiation on SiC films and to understand how the chemical sputtering processes of carbon in SiC films takes place.
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