Abstract
The formation of aligned rows of dimers at the Si(100) surface produces the well known basic (2 × 1) reconstruction. However, during the last years many reconstructions (C(4 × 2), C(2 × 2), C(4 × 4), C(8 × 8), (2 × 8), (2 × n)) have been observed by diffraction techniques (LEED, TEAS). The (2 × n) family has been interpreted as induced by a very low contamination of Ni (LEED experiment, threshold of the ratio of the Ni/Si Auger peaks = 0.35%) but the C(8 × 8) structure has been attributed to the clean surface. In this study by He diffraction (TEAS) the C(8 × 8) and the (2 × 8) reconstructions are basically obtained after different thermal treatments and two critical temperatures associated to the appearance of these phases are observed but a SIMS analysis reveals a very slight copper contamination. On clean samples only the (2 × 1) is observed.
Published Version
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