Abstract
In this paper, we propose a new HEMT structure with AlInN and GaN as a barrier and buffer layer, respectively, and AlN as a spacer between them. SiO2 and Si3N4 multilayer dielectric films are used for gate isolation and passivation respectively. The structure is grown on SiC substrate which increased the breakdown voltage to 1500 V. A good ON/OFF current ratio of 1010 and an excellent sub-threshold slope of 65 mV/decade is achieved due to the use of AlInN as the barrier layer. The gate leakage current was observed to be quite low of the order of 10−12 A as a result of the introduction of SiO2. The small-signal model of the device is built including parasitic capacitance, inductors, and resistors. All the results were simulated using Silvaco Atlas.
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