Abstract
We have studied the suitability of nano-meter-scale InGaAs HEMTs as a high speed, low power logic technology for beyond CMOS applications.To this end, we have designed an enhancement-mode 90nm gate-length InGaAs HEMT with excellent logic figure of merit. The barrier and buffer materials are changed and their input and output characteristics are compared. The output current generated by the HEMT with InAlAsP as buffer and barrier layer is nearly three times as that of HEMT with InAlAs as the buffer and barrier layer. Similarly input characteristics for the HEMT with InAlAsP as buffer and barrier shows better performance as compared to other barrier and buffer layers.
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