Abstract
β-FeSi 2 exhibits a strong optical absorption and luminescence peak at the energy of about 0.85 eV, which corresponds to the wavelength window preferred for optical communication systems. This property makes β-FeSi 2 a promising material to be used in optoelectronic applications and it has received great research interest. In this study, the formation of β-FeSi 2 by high current ion implantation using a metal vapor vacuum arc ion source was investigated. Fe atoms with dose ranging from 4×10 17 to 2×10 18/cm 2 were implanted into (1 0 0)Si substrates. Pure β-FeSi 2 was successfully fabricated. α-FeSi 2 with strong (1 1 1) preferred orientation was also formed when the implantation was conducted at the temperature of 580 °C.
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