Abstract
Some of the special characteristics of thermal energy atomscattering make it a uniquely adapted technique forinvestigations on diffusion and growth. In this work we reviewsome recent results obtained during homoepitaxial and heteroepitaxialgrowth, both on bare substrates and assisted by a surfactantlayer. We describe the fundamentals of the technique and the method of analysis, putting special emphasis on the informationthat can be obtained about important physical parameters suchas Ehrlich-Schwoebel barriers, surface and edge diffusion, stepbunching, and interdiffusion at heteroepitaxial interfaces. Wealso show examples of how diffusion and growth can be tailoredby different means, such as using surfactants.
Published Version
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