Abstract
Low- k SiOC(–H) films were deposited on a p-type Si(100) substrate using ultraviolet (UV) source assisted plasma-enhanced chemical vapor deposition with a mixture of a methyltrimethoxysilane [MTMS: CH 3Si(OCH 3) 3] and oxygen gases. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to investigate the bonding configurations and the atomic concentrations of the SiOC(–H) films. The lowest dielectric constant was about 2.3 ± 0.11, which was deposited using the [MTMS/(MTMS + O 2)] mixture gases of 100% with UV irradiation. The SiOC(–H) film with low dielectric constant have cross-linking structure with nano-pore due to the combined Si–CH n –Si bond and Si–O–Si network, in which the Si–CH n –Si bond is formed due to the incorporation of CH 3 groups into the Si–O–Si network.
Published Version
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