Abstract
Cu2ZnSnS4 (CZTS) is a widely studied material in thin film photovoltaics. The desirable property of copper poor and zinc rich in CZTS thin films introduces several point defects and secondary and tertiary phases irrespective of growth techniques and growth conditions; these defects and the phases introduce disorder in the lattice. In the present study, CZTS thin films are prepared at 520K with DC magnetron sputtering technique using CZT alloy target in the presence of hydrogen sulfide plasma. The CZTS thin films have been prepared at 30W and 40W magnetron powers. X-ray diffraction and Raman spectroscopy show that the CZTS films are polycrystalline and have partially disordered kesterite (PD-KS) phase. The CZTS films grown are copper poor and zinc rich as indicated by Energy Dispersive X-ray (EDX) analysis. The optical band gap of the films is 1.56eV. The disorder of PD-KS CZTS films has been studied by the low temperature (300−20K) electrical resistivity and Hall effect measurements. The transport of charge carriers in disordered p-CZTS takes place via hopping mechanisms. CZTS films prepared with 30W magnetron power are more disordered structure due to the copper vacancy (VCu). The surface work function of CZTS thin films measured by Kelvin probe technique is 4.7eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
