Abstract
The concentration profiles of phosphorus at successive equally spaced layers in front of a GaP crystal growing under normal conditions of liquid phase epitaxy (LPE) have been simulated using the appropriate boundary conditions and hence the growth rate of GaP has been calculated. The concentration gradient at the interface has been used to calculate the growth rate and hence the amount etched or grown as a function of time has been investigated. Our theoretical predictions have been compared with the reported experimental values and the results are discussed in detail.
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