Abstract
A diffusive transport model for the liquid phase epitaxial (LPE) growth process of InP from In rich solution is presented. The concentration profiles of solute at different places in front of the growing crystal interface under normal conditions of LPE at successive time intervals have been simulated using numerical analysis and applying appropriate boundary conditions. From the concentration profiles, the growth rate of InP has been calculated. Different cooling rates and undercooling have been used in our simulation work and hence the amount of InP etched or grown has been investigated. The estimated growth rates have been compared with the reported experimental values.
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