Studies on low-leakage surface-undoped InAlAs/InGaAs-doped channel HFETs

Abstract

Very low, steady tunneling gate leakage of 80 nA/mm at Vgs=10 V and excess impact ionization gate leakage of 700 nA/mm at Vds=2 V have been achieved on InAlAs/InGaAs/InP-doped channel HFETs with an undoped InGaAs cap layer. Double bell-shaped peaks of excess gate leakage are observed in these very low-leakage devices, and are reported for the first time. The mechanism for the observation of a subpeak in gate leakage is discussed. © 1998 John Wiley & Sons, Inc. Microwave Opt Technol Lett 17: 315–317, 1998.