Abstract
Excess gate leakage is usually observed in InP-based HEMTs as a hump in the i/sub g/-V/sub g/ characteristics, appearing at low V/sub ds/. This excess current has been ascribed to impact ionization in the InGaAs channel. A second hump is also observed at higher V/sub ds/. Analysis of the features of the two humps, supported by electroluminescence observations, points to a more complex behaviour, with real space transfer through the buffer layer to the AlInAs/InP interface playing a major role in the low V/sub ds/ hump.
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