Studies on crystal growth, optical and electrical characterization of pure and Dy-doped bismuth silicate single crystals

Abstract

(0.5 mol%) Dysprosium (Dy) doped bismuth silicon oxide (BSO) single crystals were grown by the Czochralski technique under air atmosphere. Detailed analysis of Dy-doped BSO with pure BSO has been studied through optical analysis. The absorption edges of pure and Dy-doped BSO crystals are found to be 405 nm and 415 nm, respectively. The shift in the absorption edge is contributed to the defect centers created in the crystal with Dy-doping. The shifts observed in the Raman spectra on doping Dy are found to be lower, when compared with the pure BSO crystal. This effect can be correlated to the lattice distortion induced by the Dy doping. The oxide formation and intrinsic defects in the BSO crystal have been identified by photoluminescence analysis. Dielectric measurements reveal that higher permeability value in the BSO sample is due to the presence of charged defects, which can be related to the space charge polarization. There is a slight decrease in dielectric constant on doping with Dy. The piezoelectric value explains the defects formed in the crystal. On poling, d 33 value of BSO and Dy-doped BSO are 32 pC/N and 40 pC/N, respectively.