Abstract
An easy to perform procedure is presented for cleaning PFA (“Perfluoroalkoxy”) molds, especially for demanding and large scale applications. The leaching of PFA-vessels with diluted aqueous solutions of hydrogen peroxide, ammonia and triethanolamine (TEA) reveals cleaning effects comparable to the effectiveness of more hazardous procedures, such as leaching with concentrated nitric acid or with cleaning solutions containing hydrofluoric acid. The method is suitable even for demanding applications in the field of semiconductor production. Differential thermal desorption analysis (DTDA) gave no hints on chemical “carry over” effects of the organic ligand from pre-cleaned PFA molds to wafer surfaces. Furthermore, the results of TXRF-studies on Si-wafers have opened up promising prospects for the employment of TEA in wafer cleaning technology itself. The Fe deposition on Si-wafer surfaces from Fe-spiked SC-1-type cleaning solutions can evidently be suppressed for Fe concentrations up to 0.1 mg/l by the addition of TEA in 104-fold excess.
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