Abstract
The deposition of tungsten onto silicon substrates using plasma CVD has been investigated in a planar diode reactor. The reaction is heterogeneous and the mass deposition rate found to be m = Kp[WF 6] 1 p[H 2] 1 2 × exp {−0.16eV/ kT} . The reaction is thought to be due to silicon reduction of the WF 6, the tungsten containing species diffusing through the porous tungsten film to react at the silicon-tungsten interface. This reaction is very different from that observed in LPCVD.
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