Studies of the dislocation loops produced in III–V semiconducting compounds of B3 structure by irradiation in a high voltage electron microscope

Abstract

Abstract Dr. F. Reynaud studied metallurgy at the School of Mines in Saint-Etienne (1962–1965). He joined the Laboratoire d'Optique Electronique du C.N.R.S. in Toulouse (France) first as a graduate engineer (1965), then as a scientist (1973). He received the Jules Garnier prize (1974) awarded by the French Society of Metallurgy and spent a sabbatical year (1975) in the Max-Planck-Institut für Metallforschung (Institut für Werkstoffwissenschaften) in Stuttgart (F.R.G.). His research work includes order-disorder transitions in binary alloys [he organized with N. Clement and J. J. Couderc a winter school in Aussois (I984)] and electron microscopic studies of the damage created by irradiation in a high voltage electron microscope of different materials: Nia Mn, semimetals (Sb, Bi), 111-V semiconducting compounds and V3Si. Dr. B. Legros-de Mauduit graduated in 1963 from the Université Paul Sabatier in Toulouse (France). She has been working there since 1964 as a research scientist of the C.N.R.S., in the Laboratoire de Physique Structurale which became in 1980 the Laboratoire de Miaoscopie et Structure des Matériaux. Her research work includes macroscopic and microscopic studies on plastic deformation of V B semimetallic (Bi, Sb) single crystals and electron irradiation of semimetallic (Bi, Sb) and recently 111-V semiconducting (InP, InSb, GaSb, etc.) thin films. A series of experiments was performed by high voltage electron microscopy (HVEM) to study the behaviour of radiation-produced defects above room temperature in semiconducting compounds InP, InSb, GaAs and GaSb with the B3 (zincblende) structure. During the observation by HVEM operating at 2 MV, i.e. much above the threshold voltages of both constituents of the compounds, the formation of interstitial dislocation loops was observed in InP, InSb, GaAs and GaSb above room temperature. The Burgers vectors of the majority of the loops were determined to be b=½<110>, so that there are six families of such perfect loops. This result is quite different from the case of II–VI semiconducting compounds with the B3 structure (CdTe, ZnSe and ZnS) where the Burgers vectors of the loops were determined to be mostly b=½<111>, sometimes b=½<110> and exceptionally b=<100>.